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SAMSUNG 8GB – DDR5 – RAM – 4800MHz – SODIMM – Laptop tray

Name: SAMSUNG 8GB - DDR5 - RAM - 4800MHz - SODIMM - Laptop tray
SKU: m425r1gb4bb0-cqkol
Availability: InStock

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2.999,00 EGP

Size : 8GB
Style : DDR5 4800MHz
Computer Memory Size : 8 GB
RAM Memory Technology : DDR5
Memory Speed : 4800 MHz
Compatible Devices : Laptop
Special Features : High performance

Available : 2 Sold : 0

2 in stock

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Size Guide
Size Guide
SIZE CHEST WAIST HIPS
XS 34 28 34
S 36 30 36
M 38 32 38
L 40 34 40
XL 42 36 42
2XL 44 38 44
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We ship to all 50 states, Washington DC. All orders are shipped with a UPS tracking number. Always free shipping for orders over US $200. During sale periods and promotions the delivery time may be longer than normal.
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Elessi will accept exchanges and returns of unworn and unwashed garments within 30 days of the date of purchase (14 days during the sales period), on presentation of the original till receipt at any store where the corresponding collection is available within the country of purchase.Your return will usually be processed within a week to a week and a half. We’ll send you a Return Notification email to notify you once the return has been completed. Please allow 1-3 business days for refunds to be received to the original form of payment once the return has been processed.
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SAMSUNG 8GB - DDR5 - RAM - 4800MHz - SODIMM - Laptop tray
2.999,00 EGP
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SKU: m425r1gb4bb0-cqkol Categories: Hardware, Ram- ذاكرة عشوائية Samsung

Description

DDR5 ushers in
data-centric innovation

DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved capacity,
and bolstered reliability are packed into DDR5 to enhance overall system performance.
Samsung’s memory technology propels the next era of planet-friendly innovation with power-saving DDR5.

An illustrative image of Samsung DDR5 chip above The Earth.

Breathtaking speed
for huge real-time data

With exceptional transfer speeds of up to 7,200 Mbps, DDR5 effectively handles the ever-increasing demands of larger, more
complex data workloads. DDR5 brings more than doubled increase in performance compared to DDR4, with double the burst length from 8 to 16, and double the banks from 16 to 32. The astonishing performance raises the ceiling on big data processing, while seamlessly handling 8K content.

An illustrative image of DDR5 with higher performance transfer speeds of up to 7,200 Mbps.

4 times the capacity to fuel industry innovation

Samsung’s 12nm-class process, TSV, and EUV technology have developed the industry’s largest 1TB DDR5 memory module.
The fourfold capacity enables user to fluidly handle heavy simultaneous workloads, along with scalability for future innovation.

An image of float the Samsung DDR5 chip and variety of application images in the datacenter, with 'Up to 512GB, 2X capacity' typography.

Robust reliability
with a self-correcting solution

ODECC (on-die error-correction code) technology applied in DDR5 helps maintain secure and stable data reliability,
to fully leverage powerful performance. ODECC virtually eliminates single bit errors for enhanced reliability
even with the strenuous demands of big data.

An image of Samsung DDR5 chips are crossed against an image of 'Non ODECC, ODECC' typography written on graphic symbolized the data.

The energy-saving choice
to sustain our planet

DDR5 achieves 20% greater power efficiency than DDR4 through improved performance and power reduction.
Replacing a data center’s DDR4 with DDR5 saves power of up to 1TWh annually. The on-DIMM PMIC further boosts
power management efficiency and power supply stability. It is the all-around sustainable choice for our environment.