Samsung 990 PRO 1TB PCIe 4.0 NVMe SSD, M.2 (2280), up to 7,450MB/s read & 6,900MB/s write

Name: Samsung 990 PRO 1TB PCIe 4.0 NVMe SSD, M.2 (2280), up to 7,450MB/s read &amp; 6,900MB/s write
SKU: 990 PRO 1TB
Availability: InStock

Sold by: Mostafa ELawady

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5.850,00 EGP

Form Factor:M.2 2280

Capacity:1TB

NAND Flash Type:V7 V-NAND 3bit MLC

Max Sequential Read:Up to 7450 MBps

Interface:PCIe Gen 4.0 x4, NVMe 2.0

Max Sequential Write:Up to 6900 MBps

DRAM:YES

Endurance (TBW):600

Cache:1GB

Available : 2 Sold : 0

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Size Guide
Size Guide
SIZE CHEST WAIST HIPS
XS 34 28 34
S 36 30 36
M 38 32 38
L 40 34 40
XL 42 36 42
2XL 44 38 44
Delivery Return
Delivery
We ship to all 50 states, Washington DC. All orders are shipped with a UPS tracking number. Always free shipping for orders over US $200. During sale periods and promotions the delivery time may be longer than normal.
Return
Elessi will accept exchanges and returns of unworn and unwashed garments within 30 days of the date of purchase (14 days during the sales period), on presentation of the original till receipt at any store where the corresponding collection is available within the country of purchase.Your return will usually be processed within a week to a week and a half. We’ll send you a Return Notification email to notify you once the return has been completed. Please allow 1-3 business days for refunds to be received to the original form of payment once the return has been processed.
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Samsung 990 PRO 1TB PCIe 4.0 NVMe SSD, M.2 (2280), up to 7,450MB/s read & 6,900MB/s write
5.850,00 EGP
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SKU: 990 PRO 1TB Categories: hard disk قرص التخزين, Hardware, ssd m.2 Samsung

Description

Form Factor
M.2
Capacity
1TB
Sequential Read Speed
Up to 7,450 MB/s
Sequential Write Speed
Up to 6,900 MB/s

Model Code (Capacity)¹⁾

MZ-V9P1T0BW (1TB)
MZ-V9P2T0BW (2TB)
MZ-V9P4T0BW (4TB)

General Feature

Application
Client PCs, Game Consoles
FORM FACTOR
M.2 (2280)
INTERFACE
PCIe Gen 4.0 x4, NVMe 2.0
DIMENSION (WxHxD)
80 x 22 x 2.3 mm
WEIGHT
Max 9.0g Weight
STORAGE MEMORY
Samsung V-NAND 3-bit MLC
CONTROLLER
Samsung in-house Controller
CACHE MEMORY
Samsung 1GB Low Power DDR4 SDRAM (1TB)

Special Feature

TRIM Support
Supported
S.M.A.R.T Support
Supported
GC (GARBAGE COLLECTION)
Auto Garbage Collection Algorithm
ENCRYPTION SUPPORT
AES 256-bit Encryption (Class 0) TCG/Opal
IEEE1667 (Encrypted drive)
WWN SUPPORT
Not supported
DEVICE SLEEP MODE SUPPORT
Yes

Performance²⁾

SEQUENTIAL READ
1TB: Up to 7,450 MB/s
SEQUENTIAL WRITE
1TB: Up to 6,900 MB/s
RANDOM READ (4KB, QD32)
1TB: Up to 1,200,000 IOPS
RANDOM WRITE (4KB, QD32)
1TB: Up to 1,550,000 IOPS
RANDOM READ (4KB, QD1)
1TB: Up to 22,000 IOPS
RANDOM WRITE (4KB, QD1)
1TB: Up to 80,000 IOPS

Environment

AVERAGE POWER CONSUMPTION
(System Level)³⁾
1TB: Average 5.4 W Maximum 7.8 W (Burst mode)
POWER CONSUMPTION (IDLE)³⁾
1TB: Max. 50 mW
POWER CONSUMPTION (DEVICE SLEEP)
1TB: Max. 5 mW
ALLOWABLE VOLTAGE
3.3 V ± 5 % Allowable voltage
RELIABILITY (MTBF)
1.5 Million Hours Reliability (MTBF)
OPERATING TEMPERATURE
0 – 70 ℃ Operating Temperature
Shock
1,500 G & 0.5 ms (Half sine)